LASER ANNEALING METHOD FOR CDTE THIN FILM SOLAR CELLS BY USING 808-NM DIODE LASER

摘要

The present invention relates to a method for annealing a CdTe thin film solar cell by using a 808-nm diode laser. The purpose of the present invention is to improve particle growth and the crystal of a thin film by performing a laser annealing process on a CdTe thin film by using a CW 808-nm diode laser and to analyze a structure and an optical property, light transmittance, absorption coefficient, crystal size, etc., by performing an annealing process with various laser outputs. To achieve the purpose, the present invention includes (a) a process of depositing a CdTe thin film by a CdTe target; and (b) a process of annealing the deposited CdTe thin film by using a diode laser.