METHOD FOR MANUFACTURING SUPER JUNCTION MOSFET AND SUPER JUNCTION MOSFET MANUFACTURED THEREBY

摘要

The present invention relates to a method for manufacturing super junction (SJ) MOSFET and SJ MOSFET manufactured thereby. The manufacturing method is based on formula 1 and the method comprises the following steps: setting either impurities doping concentration value on epitaxial layer buried in deep trench or cell pitch value; performing etching process for forming at least one deep trench on a second conductive epitaxial layer formed on the upper side of a first conductive epitaxial layer based on the preset cell pitch value or the cell pitch value set above; and processing sedimentation process for depositing a third conductive epitaxial layer in which third conductive impurities is doped onto the upper structure based on the impurities doping concentration value set above or preset concentration value in order to bury at least one deep trench for several times. By using the present invention, SJ MOSFET can have the highest breakdown voltage and the lowest on resistance since electric charge in the P and N areas of drift area is valued.;COPYRIGHT KIPO 2014