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SENSOR THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE HAVING THE SAME, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE
SENSOR THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE HAVING THE SAME, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE
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机译:传感器薄膜晶体管和薄膜晶体管基板具有相同的制造薄膜晶体管基板的方法
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摘要
A sensor thin film transistor and thin film transistor substrate having the same, method for manufacturing thin film transistor substrate are provided to prevent the degradation of the driving characteristic by forming the driving thin-film transistor and sensor thin film transistor by the process of the different temperature. The thin film transistor substrate comprises the driving thin-film transistor and sensor thin film transistor. The driving thin-film transistor is connected to the gate line(110) and dataline(140). The driving thin-film transistor drives the pixel region indicating image. The sensor thin film transistor senses the light which is incident in the pixel region. The thin film transistor substrate comprises the gate line, the storage line(114), the sensor gate line(117), the sensor data common broker line(120), the gate insulating layer, the semiconductor layer(130), the dataline, the sensor data common line(150), the sensor output line(160), the protective layer and the pixel electrode. The semiconductor layer is formed between the source electrode and drain electrode.
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