首页> 外国专利> SENSOR THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE HAVING THE SAME, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE

SENSOR THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE HAVING THE SAME, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE

机译:传感器薄膜晶体管和薄膜晶体管基板具有相同的制造薄膜晶体管基板的方法

摘要

A sensor thin film transistor and thin film transistor substrate having the same, method for manufacturing thin film transistor substrate are provided to prevent the degradation of the driving characteristic by forming the driving thin-film transistor and sensor thin film transistor by the process of the different temperature. The thin film transistor substrate comprises the driving thin-film transistor and sensor thin film transistor. The driving thin-film transistor is connected to the gate line(110) and dataline(140). The driving thin-film transistor drives the pixel region indicating image. The sensor thin film transistor senses the light which is incident in the pixel region. The thin film transistor substrate comprises the gate line, the storage line(114), the sensor gate line(117), the sensor data common broker line(120), the gate insulating layer, the semiconductor layer(130), the dataline, the sensor data common line(150), the sensor output line(160), the protective layer and the pixel electrode. The semiconductor layer is formed between the source electrode and drain electrode.
机译:提供一种传感器薄膜晶体管和具有该传感器薄膜晶体管的薄膜晶体管基板,制造薄膜晶体管基板的方法,以通过通过不同的工艺形成驱动薄膜晶体管和传感器薄膜晶体管来防止驱动特性的劣化。温度。薄膜晶体管基板包括驱动薄膜晶体管和传感器薄膜晶体管。驱动薄膜晶体管连接到栅极线(110)和数据线(140)。驱动薄膜晶体管驱动像素区域指示图像。传感器薄膜晶体管感测入射在像素区域中的光。薄膜晶体管基板包括栅极线,存储线(114),传感器栅极线(117),传感器数据公共中介线(120),栅极绝缘层,半导体层(130),数据线,传感器数据公共线(150),传感器输出线(160),保护层和像素电极。半导体层形成在源电极和漏电极之间。

著录项

  • 公开/公告号KR101441429B1

    专利类型

  • 公开/公告日2014-09-18

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20070096723

  • 发明设计人 전형일;황태형;니클린;

    申请日2007-09-21

  • 分类号H01L29/786;

  • 国家 KR

  • 入库时间 2022-08-21 15:40:09

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