Method for manufacturing silicon thin layer solar cells, involves selecting energy density and pulse width of irradiation of intensive light pulse preferably by flash lamp curing such that defective-rich surface layer is completely cured

摘要

The method involves producing a phosphorus rich surface layer in p-silicon, which is roughened by anisotropic corroding by a plasma immersion ion implantation process. Front side contacts are applied by chemical deposition or vaporization by a masque, and back contacts are applied on a back side. A structure of the front side is completely cured by an intensive light pulse, where energy density and pulse width of irradiation of the light pulse, preferably by flash lamp curing, is selected such that a defective-rich surface layer disturbed by the process is completely cured. The front side contacts are made of nickel, and an anti-reflection layer is made of silicon dioxide and silicon nitride.