Method for manufacturing chips, involves providing back metal stack on laser absorption layer, irradiating laser absorption layer with laser light along dividing lines, and separating chips along dividing lines using covered division

摘要

The method involves providing a semiconductor wafer (12) comprising multiple chip areas (14a) that are separated by parting lines. Chip pads are arranged on a major surface (12a). A laser absorption layer (20) is provided on another major surface (12b) opposite to the former major surface. A back metal stack (18) is provided on the laser absorption layer. The laser absorption layer is irradiated with laser light along dividing lines, and chips (10) are separated along the dividing lines using covered division. The absorbent layer is healed completely before providing the back metal stack. Independent claims are also included for the following: (1) a chip (2) a semiconductor wafer.