Projection exposure system for microlithography, has switchable deflector switching incident light beam from one direction to another direction, where angle between directions is adjustable at specific switching speed

摘要

The system has an illumination system for illuminating a reticle, and a projection lens for imaging the reticle onto a wafer. A switchable deflector (2) switches an incident light beam (1) from one direction (3) to another direction (4), where the angle (theta) between the directions is adjustable at a switching speed of less than or equal to 1 micro seconds. The switchable deflector is prepared such that the light beam from a laser light source is switched in a beam path towards a multi-mirror array (5), where the switchable deflector is used as a beam homogenizer. An independent claim is also included for a method for operating the projection exposure system for microlithography.