Method for transferring semiconductor layer on substrate receiver of semiconductor structure, involves forming barrier layer, and selecting thickness of barrier layer such that fracture face does not reach semiconductor layer

摘要

The method involves forming a containment layer (20) including chemical species. A barrier layer (30) presenting a chemical composition different from a semiconductor layer (40) is formed, where the barrier layer is in crystal lattice arrangement with the containment layer, and the composition limits diffusion of the species in the semiconductor layer. The semiconductor layer intended to be transferred is formed. Thickness of the barrier layer is selected such that a fracture face on the containment layer does not reach the semiconductor layer. The barrier layer is selectively engraved. An independent claim is also included for a semiconductor structure.