CMOS CELL REALIZED IN FD SOI TECHNOLOGY

摘要

The integrated cell comprises for example at least one NMOS transistor (T2) and a PMOS transistor (T1), said cell being made in a completely desolated silicon on insulator technology, the substrates of all the transistors of the cell being polarizable by a same adjustable bias voltage (Vbias) to be received on a bias input (EPL) of the cell.