Device for generating gate-control voltage in e.g. insulated gate bipolar transistor, of power-electronic apparatus, has auxiliary voltage unit whose negative pole is switched to gate, and switches guided into non-current-conductive state

摘要

The device has a terminal gate (G), an emitter (E) and a power semiconductor switch-specified auxiliary voltage unit equipped with positive and negative poles to control power semiconductor switches. The auxiliary voltage unit includes switches and a gate-resistor (RG). The auxiliary voltage unit is designed, so that the negative pole of the auxiliary voltage unit is switched by the first switch and gate resistor to the gate, the positive pole is switched to the emitter, and a power semiconductor switches are guided into a non-current-conductive state.