Cu, In, a method for producing powder containing an element of Ga and Se, and Cu, In, Ga and Se sputtering target containing an element of the

摘要

PROBLEM TO BE SOLVED: To provide: a Cu-In-Ga-Se based powder which contains Cu, In, Ga and Se and is free from occurrence of cracks during sintering or process; and a sintered body and a sputtering target, each of which uses the Cu-In-Ga-Se based powder.;SOLUTION: The powder containing elements Cu, In, Ga and Se is characterized by containing a Cu-In-Ga-Se based compound and/or a Cu-In-Se based compound in an amount of 60 mass% in total. It is preferable that the powder contains: an In-Se based compound of 20 mass%; and/or a Cu-In based compound of 20 mass%.;COPYRIGHT: (C)2012,JPO&INPIT