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The method for forming the forming method and a silicon oxycarbonitride nitride film of boron-containing silicon oxycarbonitride nitride film
The method for forming the forming method and a silicon oxycarbonitride nitride film of boron-containing silicon oxycarbonitride nitride film
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机译:含硼的氮氧化碳氮化硅膜的形成方法的形成方法和氮氧化碳氮化硅膜
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摘要
PROBLEM TO BE SOLVED: To provide a formation method of a boron-containing acid silicon carbonitride film which can shorten the process time, and can contribute to enhancement of throughput.;SOLUTION: In the formation method of a boron-containing acid silicon carbonitride film for forming a boron-containing acid silicon carbonitride film on a base, a boron-containing film is formed on a base (step 1), and then a boron-containing acid silicon carbonitride film is formed by laminating a silicon carbonitride film and an acid silicon nitride film on the boron-containing film (step 2, and step 3).;COPYRIGHT: (C)2014,JPO&INPIT
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