首页> 外国专利> Copper or copper alloy bonding wire , a method for producing copper production process and the bonding wire manufacturing method of a copper alloy

Copper or copper alloy bonding wire , a method for producing copper production process and the bonding wire manufacturing method of a copper alloy

机译:铜或铜合金接合线,生产铜的工艺方法和铜合金接合线的制造方法

摘要

Copper or a copper alloy characterized in having an ±-ray emission of 0.001 cph/cm 2 or less. Since recent semiconductor devices are produced to have higher density and higher capacity, there is greater risk of soft errors caused by the influence of ± rays emitted from materials positioned near semiconductor chips. In particular, there are strong demands for achieving higher purification of copper and copper alloys which are used near the semiconductor device, such as copper or copper alloy wiring lines, copper or copper alloy bonding wires, and soldering materials, and materials reduced in ±-ray emission are also demanded. Thus, the present invention elucidates the phenomenon in which ± rays are emitted from copper or copper alloys, and provides copper or copper alloy reduced in ±-ray emission which is adaptable to the demanded material, and a bonding wire in which such copper or copper alloy is used as its raw material.
机译:铜或铜合金,其特征在于,其±射线发射为0.001cph / cm 2以下。由于近来的半导体器件被生产为具有更高的密度和更高的容量,因此存在软误差的风险更大,该误差是由位于半导体芯片附近的材料发射的±射线的影响所引起的。特别地,强烈要求实现在半导体器件附近使用的铜和铜合金的更高纯度,例如铜或铜合金布线,铜或铜合金键合线和焊接材料,以及降低±还要求射线发射。因此,本发明阐明了从铜或铜合金发射±射线的现象,并提供了在±射线发射方面减少的铜或铜合金,其适合于所需的材料,以及提供了其中铜或铜的接合线。合金用作原材料。

著录项

  • 公开/公告号JP5690917B2

    专利类型

  • 公开/公告日2015-03-25

    原文格式PDF

  • 申请/专利权人 JX日鉱日石金属株式会社;

    申请/专利号JP20130503437

  • 发明设计人 加納 学;

    申请日2012-02-15

  • 分类号C22C9/00;C22B15/14;C22C9/01;C22C9/02;C22C9/04;C22C9/06;C22C9/08;C22C9/10;H01L21/60;C25C1/12;C25C7/04;

  • 国家 JP

  • 入库时间 2022-08-21 15:29:42

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