首页> 外国专利> METHOD OF EVALUATING POLYCRYSTAL SILICON GRAIN SIZE, METHOD OF SELECTING POLYCRYSTAL SILICON ROD, POLYCRYSTAL SILICON ROD, POLYCRYSTAL SILICON LUMP, AND METHOD OF MANUFACTURING SINGLE CRYSTAL SILICON

METHOD OF EVALUATING POLYCRYSTAL SILICON GRAIN SIZE, METHOD OF SELECTING POLYCRYSTAL SILICON ROD, POLYCRYSTAL SILICON ROD, POLYCRYSTAL SILICON LUMP, AND METHOD OF MANUFACTURING SINGLE CRYSTAL SILICON

机译:多晶硅晶粒尺寸的评估方法,多晶硅棒,多晶硅棒,多晶硅块的选择方法以及单晶硅的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a technique which contributes the stable production of a single crystal silicon by selecting a polycrystal silicon suitable for a production raw material for the single crystal silicon in high quantitativity and reproducibility.;SOLUTION: When evaluating a grain size of a polycrystal silicon by an X-ray diffraction method, a value (ΔB/Pave) is used as an evaluation index of the grain size of the polycrystal silicon by the steps of: placing a sampled tabular specimen 20 at a position where Bragg reflection from a Miller index plane hkl is detected; rotating the tabular specimen 20 in a plane around the center of the tabular specimen 20 as a rotation center by a rotation angle of φ so that an X-ray irradiation region defined by a slit φ-scans on a principal surface of the tabular specimen 20; obtaining a chart indicating rotation angle (φ) dependency of a Bragg reflection intensity of the tabular specimen 20 from the Miller index plane hkl; obtaining a difference (ΔB) between a maximum value (Bmax) and a minimum value (Bmin) of a diffraction intensity value of a base line from the chart; and dividing ΔB by a mean value (Pave) of the diffraction intensity values.;COPYRIGHT: (C)2015,JPO&INPIT
机译:解决的问题:提供一种技术,该技术通过以高定量性和再现性选择适合于单晶硅的生产原料的多晶硅来为单晶硅的稳定生产做出贡献。通过X射线衍射法测量多晶硅,通过以下步骤将值(ΔB/ P ave )用作多晶硅晶粒尺寸的评价指标:图20是在检测到来自米勒折射率面的布拉格反射的位置的图。在围绕作为旋转中心的板状样本20的中心的平面内旋转板状样本20一个旋转角度,从而在板状样本20的主表面上扫描由狭缝定义的X射线照射区域;从米勒折射率面获得表示板状试样20的布拉格反射强度的旋转角(φ)依赖性的图表。从该图获得基线的衍射强度值的最大值(B max )与最小值(B min )之间的差(ΔB);并用ΔB除以衍射强度值的平均值(P ave )。;版权:(C)2015,JPO&INPIT

著录项

  • 公开/公告号JP2015003847A

    专利类型

  • 公开/公告日2015-01-08

    原文格式PDF

  • 申请/专利权人 SHIN ETSU CHEM CO LTD;

    申请/专利号JP20130130789

  • 发明设计人 MIYAO SHUICHI;NETSU SHIGEYOSHI;

    申请日2013-06-21

  • 分类号C01B33/02;C30B29/06;

  • 国家 JP

  • 入库时间 2022-08-21 15:28:57

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