Design method , a Raman amplifier design method of a semiconductor laser device , a method of manufacturing a semiconductor laser device , a semiconductor laser device , a Raman amplifier and an optical communication system

摘要

To provide a method for designing a semiconductor laser device capable of suppressing the stimulated Brillouin scattering in an optical fiber due to the laser beam output from the semiconductor laser device used for the excitation light source for Raman amplification . And A distance from the output side reflecting unit 31 to the second reflecting means 28 , and the effective reflectance of the output-side reflection means 31 , to the semiconductor laser device 30 by adjusting the reflectance of the second reflecting means 28 by controlling the specific amount of return light , it is characterized in that to the LFF period of the semiconductor laser device 20 to 20ns or less . [ Selection Figure Figure 2