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Methods For Forming Contact Landing Regions In Split-Gate Non-Volatile Memory (NVM) Cell Arrays
Methods For Forming Contact Landing Regions In Split-Gate Non-Volatile Memory (NVM) Cell Arrays
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机译:在分裂门非易失性内存(NVM)单元阵列中形成接触着陆区的方法
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摘要
Methods and related structures are disclosed for forming contact landing regions in split-gate NVM (non-volatile memory) systems. A dummy select gate structure is formed while also forming select gates for split-gate NVM cells. A control gate layer is formed over the select gates and the dummy select gate structure, as well as an intervening charge storage layer. The control gate material will fill in gaps between the select gate material and the dummy select gate material. A non-patterned spacer etch is then used to etch the control gate layer to form a contact landing region associated with the dummy select gate structure while also forming spacer control gates for the split-gate NVM cells. The disclosed embodiments provide improved (e.g., more planar) contact landing regions without requiring additional processing steps and without increasing the pitch of the resulting NVM cell array.
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