首页> 外国专利> METHOD FOR FORMING PN JUNCTION IN GRAPHENE WITH APPLICATION OF DNA AND PN JUNCTION STRUCTURE FORMED USING THE SAME

METHOD FOR FORMING PN JUNCTION IN GRAPHENE WITH APPLICATION OF DNA AND PN JUNCTION STRUCTURE FORMED USING THE SAME

机译:利用相同的DNA和PN结结构应用在石墨烯中形成PN结的方法

摘要

A method for forming a PN junction in graphene includes: forming a graphene layer, and forming a DNA molecule layer on a partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the graphene layer with a predetermined doping property upon adsorption on the graphene layer. The DNA molecule has a nucleotide sequence structure designed for doping of graphene so that doped graphene has a specific semiconductor property. The DNA molecule is coated on the surface of the graphene layer of which the partial region is exposed by micro patterning, and thereby, PN junctions of various structures may be formed by a region coated with the DNA molecule and a non-coated region in the graphene layer.
机译:在石墨烯中形成PN结的方法包括:形成石墨烯层,以及在石墨烯层的部分区域上形成DNA分子层,该DNA分子层具有被设计为向石墨烯层提供预定掺杂的核苷酸序列结构。在石墨烯层上吸附时的性质。 DNA分子具有设计用于掺杂石墨烯的核苷酸序列结构,因此掺杂的石墨烯具有特定的半导体特性。通过微图案化将DNA分子涂覆在部分区域暴露的石墨烯层的表面上,由此,可以通过用DNA分子涂覆的区域和未涂覆的区域来形成各种结构的PN结。石墨烯层。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号