首页> 外国专利> Bidirectional Two-Base Bipolar Junction Transistor Devices, Operation, Circuits, and Systems with Collector-Side Base Driven, Diode-Mode Turn-On, Double Base Short at Initial Turn-Off, and Two Base Junctions Clamped By Default

Bidirectional Two-Base Bipolar Junction Transistor Devices, Operation, Circuits, and Systems with Collector-Side Base Driven, Diode-Mode Turn-On, Double Base Short at Initial Turn-Off, and Two Base Junctions Clamped By Default

机译:双向两基极双极结晶体管器件,操作,电路和系统,具有集电极侧基极驱动,二极管模式导通,初始关断时双基极短路以及默认情况下钳位的两个基极结

摘要

Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
机译:用于使用双向双极晶体管(BTRAN)进行开关的功率分组开关功率转换器的方法,系统,电路和设备。四端三层BTRAN在任一方向上均提供基本相同的操作,且正向电压小于二极管压降。 BTRAN是完全对称的合并双基双向双向双极性对置器件,可在高非平衡载流子浓度的条件下运行,并且在用作功率分组交换功率转换器的双向开关时会产生令人惊讶的协同作用。 BTRAN被驱动到高载流子浓度的状态,从而使导通状态的压降非常低。

著录项

  • 公开/公告号US2015311777A1

    专利类型

  • 公开/公告日2015-10-29

    原文格式PDF

  • 申请/专利权人 IDEAL POWER INC.;

    申请/专利号US201514792262

  • 发明设计人 WILLIAM C. ALEXANDER;RICHARD A. BLANCHARD;

    申请日2015-07-06

  • 分类号H02M1/088;

  • 国家 US

  • 入库时间 2022-08-21 15:25:51

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