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Bidirectional Two-Base Bipolar Junction Transistor Devices, Operation, Circuits, and Systems with Collector-Side Base Driven, Diode-Mode Turn-On, Double Base Short at Initial Turn-Off, and Two Base Junctions Clamped By Default
Bidirectional Two-Base Bipolar Junction Transistor Devices, Operation, Circuits, and Systems with Collector-Side Base Driven, Diode-Mode Turn-On, Double Base Short at Initial Turn-Off, and Two Base Junctions Clamped By Default
Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
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