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Masks formed based on integrated circuit layout design having standard cell that includes extended active region
Masks formed based on integrated circuit layout design having standard cell that includes extended active region
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机译:基于具有标准单元的集成电路布图设计形成的掩模,该标准单元包括扩展的有源区
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摘要
An integrated circuit layout that includes a first standard cell having a first transistor region and a second transistor region; a second standard cell having a third transistor region and a fourth transistor region. The first and second standard cells adjoin each other at side boundaries thereof and the first transistor region and the third transistor region are formed in a first continuous active region, and the second transistor region and the fourth transistor region are formed in a second continuous region.
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