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Sputtering target of ferromagnetic material with low generation of particles

机译:粒子少的强磁性材料的溅射靶

摘要

Provided is a sputtering target of ferromagnetic material comprising a metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a phase (A) which is a basis metal, and metal phases (B) having a component composition different from the peripheral texture within the phase (A), the area ratio occupied by oxides within 1 μm from the most outer periphery of metal phases (B) is 80% or less, and the average grain size of the metal phases (B) is 10 μm or more and 150 μm or less. Provided is a sputtering target of ferromagnetic material capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.
机译:提供一种铁磁性材料的溅射靶,该铁磁性材料的溅射靶包含组成为含有20摩尔%以下的Cr和余量的Co的金属。其中靶结构包括作为基础金属的相(A)和具有与相(A)内的周围织构不同的成分组成的金属相(B),氧化物的面积比最远在1μm以内金属相(B)的外周为80%以下,金属相(B)的平均粒径为10μm以上且150μm以下。本发明提供一种铁磁材料的溅射靶,其能够抑制磁控溅射装置中的溅射时的粒子的产生,并且能够改善通过磁通,从而实现稳定的放电。

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