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Varactor shunt switches with parallel capacitor architecture

机译:具有并联电容器架构的变容并联开关

摘要

A parallel capacitor varactor shunt switch device may include a shunt layer, a coplanar waveguide (CPW) layer, and a tunable thin film dielectric layer that is interposed between the shunt layer and the CPW layer. The tunable thin film dielectric layer electrically isolates the shunt layer from the CPW layer. The shunt layer includes a plurality of parallel shunt lines. The CPW layer includes a CPW signal transmission line with two CPW ground lines parallel to the CPW signal transmission line. A plurality of varactor areas equal in number to the plurality of parallel shunt lines are defined in the CPW signal transmission line, each varactor area corresponding to an overlap of the CPW signal transmission line with a respective shunt line and each respective parallel shunt line and its corresponding varactor area defines a capacitor.
机译:并联电容器变容并联开关器件可以包括:并联层,共面波导(CPW)层以及插入在并联层与CPW层之间的可调薄膜介电层。可调薄膜介电层将分流层与CPW层电隔离。分流层包括多条平行的分流线。 CPW层包括CPW信号传输线,该CPW信号传输线具有与CPW信号传输线平行的两条CPW接地线。在CPW信号传输线中定义了数量等于多条并联分流线的多个变容二极管区域,每个变容二极管区域对应于CPW信号传输线与相应的分流线以及每个相应的并联分流线及其交叠处的重叠。相应的变容二极管区域限定电容器。

著录项

  • 公开/公告号US9000866B2

    专利类型

  • 公开/公告日2015-04-07

    原文格式PDF

  • 申请/专利权人 GURU SUBRAMANYAM;

    申请/专利号US201213533310

  • 发明设计人 GURU SUBRAMANYAM;

    申请日2012-06-26

  • 分类号H01L29/93;H01L27/08;H01P1/15;H01P9/00;H01P3/00;

  • 国家 US

  • 入库时间 2022-08-21 15:17:00

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