METHOD FOR PREPARING ZINC-DOPED ULTRA-SHALLOW JUNCTION ON SEMICONDUCTOR SUBSTRATE SURFACE

摘要

A method for preparing a zinc-doped ultra-shallow junction on a semiconductor substrate surface, which belongs to the technical field of semiconductor integration. In the method, a zinc-doped ultra-shallow junction is prepared on a semiconductor substrate surface in a diffusion manner from zinc in zinc oxide obtained by depositing an atomic layer. The method comprises: cleaning a semiconductor substrate surface (1); in an atomic layer deposition system, depositing a zinc oxide layer on a semiconductor substrate using an atomic layer deposition method (2); depositing a cap layer on the zinc oxide layer (3); diffusing zinc atoms in the zinc oxide layer to the semiconductor substrate surface by high-temperature annealing (4); and removing the cap layer and the zinc oxide layer (5). The method can be used for preparing ultra-shallow junctions of planar and non-planar semiconductor devices, and has the advantages of controllable junction depth and low damage to lattices of semiconductor substrates when used for doping of small-sized semiconductor devices.