首页> 外国专利> MULTI-CHANNEL MEMORY DEVICE WITH INDEPENDENT CHANNEL POWER SUPPLY STRUCTURE AND METHOD FOR CONTROLLING POWER NET

MULTI-CHANNEL MEMORY DEVICE WITH INDEPENDENT CHANNEL POWER SUPPLY STRUCTURE AND METHOD FOR CONTROLLING POWER NET

机译:独立通道电源结构的多通道存储设备及其控制电网的方法

摘要

Disclosed is a multi-channel memory device with an efficient power supply structure. The multi-channel memory device includes a first channel memory and a second channel memory which are independently accessed on the same chip. Also, the multi-channel memory device includes a decoupling unit which operationally separates the first and second external power source channel connection lines of the first and second channel memories in response to a decoupling driving signal, and a switching control unit which applies the decoupling driving signal to the decoupling unit in response to a channel power control signal to use external power independently applied to the first and second channel memories in the corresponding channels. An independent operation according to each channel is secured by independently comprising a power net according to each channel and power noise interference between the channels is removed or minimized.;COPYRIGHT KIPO 2015
机译:公开了一种具有高效电源结构的多通道存储设备。多通道存储设备包括在同一芯片上独立访问的第一通道存储器和第二通道存储器。另外,多通道存储装置包括:去耦单元,其响应于去耦驱动信号而可操作地分离第一通道存储器和第二通道存储器的第一外部电源通道连接线和第二外部电源通道连接线;以及开关控制单元,其应用去耦驱动响应于信道功率控制信号将信号提供给去耦单元,以使用独立地施加到相应信道中的第一和第二信道存储器的外部功率。通过独立地包括每个通道的电力网来确保每个通道的独立操作,并消除或最小化通道之间的电源噪声干扰。; COPYRIGHT KIPO 2015

著录项

  • 公开/公告号KR20150017647A

    专利类型

  • 公开/公告日2015-02-17

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20130137081

  • 发明设计人 KIM SOO HWANKR;

    申请日2013-11-12

  • 分类号G11C5/06;G11C5/14;

  • 国家 KR

  • 入库时间 2022-08-21 15:00:41

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号