首页> 外国专利> PRODUCTION METHOD FOR HIGH-PURITY LANTHANUM, HIGH-PURITY LANTHANUM, SPUTTERING TARGET COMPOSED OF HIGH-PURITY LANTHANUM, AND METAL GATE FILM CONTAINING HIGH-PURITY LANTHANUM AS MAIN COMPONENT

PRODUCTION METHOD FOR HIGH-PURITY LANTHANUM, HIGH-PURITY LANTHANUM, SPUTTERING TARGET COMPOSED OF HIGH-PURITY LANTHANUM, AND METAL GATE FILM CONTAINING HIGH-PURITY LANTHANUM AS MAIN COMPONENT

机译:高纯镧,高纯镧,由高纯镧组成的溅射靶材以及以高纯镧为主要成分的金属栅膜的制造方法

摘要

greater than the purity excluding rare-earth elements and gas components other than lanthanum in the lanthanum fluoride 4N a raw material, and reduced by distillation to prepare a lanthanum-calcium more purity 4N, the electron beam melting method, excluding the rare earth elements and gas components other than lanthanum, characterized in that to remove the volatile materials and the production of high-purity lanthanum having a purity of 4N or more . A method for manufacturing a high-purity lanthanum, Al, Fe, wherein the process for producing a high-purity lanthanum, characterized in that at most 10 wtppm, respectively the Cu. The method of production of high-purity lanthanum, which is characterized in that the gas components in a total amount less than 1000 wtppm. High-purity lanthanum, and a thin film for metal gate mainly composed of high-purity lanthanum sputtering target comprising high-purity lanthanum, and efficient, and also a challenge to provide a technique capable of providing a stable.
机译:大于除稀土元素和除镧以外的其他气体成分的纯度是氟化镧4N的原料,并经蒸馏还原制得纯度大于4N的镧钙,电子束熔化法排除了稀土元素和除镧以外的其他气体组分,其特征在于除去挥发性物质并生产纯度为4N或更高的高纯度镧。一种高纯度镧,Al,Fe的制造方法,其中,所述高纯度镧的制造方法的特征在于,所述Cu分别为10重量ppm以下。该高纯度镧的制造方法,其特征在于,所述气体成分的总量小于1000重量ppm。高纯度镧以及以高纯度镧为主成分的高纯度镧溅射靶构成的金属栅极用薄膜,且效率高,并且是提供能够提供稳定的技术的挑战。

著录项

  • 公开/公告号KR1015160990000B1

    专利类型

  • 公开/公告日2015-05-04

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR1020137010931

  • 申请日2011-11-14

  • 分类号C22B59/00;C22B5/04;C22B9/22;C23C14/14;

  • 国家 KR

  • 入库时间 2022-08-21 14:58:14

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