SPATIALLY SELECTIVE LASER ANNEALING APPLICATIONS IN HIGH-EFFICIENCY SOLAR CELLS

摘要

Discloses various laser processing methods for generating various types of heterojunction emitter and homojunction emitter solar cells. Methods include base and emitter contact openings, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping through laser heating of aluminum. Also disclosed are laser processing methods suitable for selective amorphous silicon ablation and selective doping for heterojunction solar cells. Disclose laser ablation techniques that leave the underlying silicon in a substantially intact state. These laser processing techniques include crystalline silicon substrates, which are planar or textured / three dimensional, and can also be fabricated through wire subwaffer processes or through epitaxial deposition processes or through other RTI ID = 0.0 The present invention can be applied to a semiconductor substrate that further includes a crystalline silicon substrate. These techniques are well suited for crystalline semiconductors including crystalline silicon thin films.