首页> 外国专利> QUANTUM ENTANGLED PHOTON PAIR GENERATING DEVICE, AND QUANTUM ENTANGLED PHOTON PAIR GENERATING METHOD

QUANTUM ENTANGLED PHOTON PAIR GENERATING DEVICE, AND QUANTUM ENTANGLED PHOTON PAIR GENERATING METHOD

机译:量子纠缠光子对产生装置及量子纠缠光子对产生方法

摘要

PROBLEM TO BE SOLVED: To enable the generation of a photon pair in a state of being quantum entangled further efficiently.;SOLUTION: A quantum entangled photon pair generating device comprises: a mesa structure including a laminate of a second semiconductor layer 102 formed from an n-type second semiconductor and a third semiconductor layer 106; and a quantum dot 103 disposed between the second semiconductor layer 102 and the third semiconductor layer 106, and formed from a non-doped third semiconductor smaller than the second semiconductor in band gap. It becomes a key that the quantum dot 103 is arranged to have a size large enough to allow two holes to be just fit therein at a time. The quantum entangled photon pair generating device further comprises a superconductor layer 104 and a metal layer 105. The metal layer 105 has an opening 105a on the side of the third semiconductor layer 106, and is formed so as to surround the periphery of the above mesa structure.;COPYRIGHT: (C)2016,JPO&INPIT
机译:解决的问题:为了能够在更有效地量子纠缠的状态下产生光子对;解决方案:量子纠缠的光子对产生装置包括:台面结构,其包括由半导体形成的第二半导体层102的叠层。 n型第二半导体和第三半导体层106;量子点103设置在第二半导体层102与第三半导体层106之间,并由带隙小于第二半导体的未掺杂的第三半导体形成。量子点103的尺寸必须足够大以一次允许两个孔恰好适合于其中,这成为关键。量子纠缠光子对生成装置还包括超导体层104和金属层105。金属层105在第三半导体层106的侧面上具有开口105a,并被形成为包围上述台面的周围。版权:(C)2016,JPO&INPIT

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号