METHOD OF MANUFACTURING P-TYPE ZnO-BASED SEMICONDUCTOR LAYER, METHOD OF MANUFACTURING ZnO-BASED SEMICONDUCTOR DEVICE WAFER, METHOD OF MANUFACTURING ZnO-BASED SEMICONDUCTOR DEVICE AND ZnO-BASED SEMICONDUCTOR DEVICE WAFER

摘要

PROBLEM TO BE SOLVED: To provide a novel method of manufacturing a p-type ZnO-based semiconductor layer.;SOLUTION: (a) An n-type ZnO-based semiconductor layer containing Ag is formed. (b) A cap layer for suppressing diffusion of Ag is formed on the ZnO-based semiconductor layer, and the ZnO-based semiconductor layer is annealed so that the ZnO-based semiconductor layer becomes p-type.;COPYRIGHT: (C)2016,JPO&INPIT