WIRE PROCESSING METHOD OF SILICON CARBIDE SINGLE CRYSTAL INGOT

摘要

PROBLEM TO BE SOLVED: To provide a wire processing method capable of reducing generation of a crack when cutting out a silicon carbide single crystal substrate by cutting a silicon carbide single crystal ingot by using a wire processing apparatus.;SOLUTION: The wire processing method for cutting a silicon carbide single crystal ingot 2 to obtain a silicon carbide single crystal substrate is characterized by specifying a crystal orientation of the silicon carbide single crystal ingot against a travel direction of a saw wire 1 and installing.;COPYRIGHT: (C)2016,JPO&INPIT