首页> 外国专利> A method of forming a Ni and Ni alloy film on a Si wafer, a method of forming a Ni and Ni alloy film on a Si wafer, a surface roughening treatment liquid of the surface of the Si wafer at the time of forming the Ni and Ni alloy film, Method of conversion treatment

A method of forming a Ni and Ni alloy film on a Si wafer, a method of forming a Ni and Ni alloy film on a Si wafer, a surface roughening treatment liquid of the surface of the Si wafer at the time of forming the Ni and Ni alloy film, Method of conversion treatment

机译:在Si晶片上形成Ni和Ni合金膜的方法,在Si晶片上形成Ni和Ni合金膜的方法,在形成Ni时Si晶片的表面的表面粗糙化处理液和镍合金膜,转化处理方法

摘要

PROBLEM TO BE SOLVED: To provide a method of forming Ni film having excellent adhesion on an Si wafer with electroless Ni plating without coating metal element having a catalytic function and without performing excessive heat treatment.;SOLUTION: There is provided a method of forming a Ni thin film 2 having a thickness of 0.05 to 0.5 μm on an Si wafer 1 and forming a thick film 3 of Ni or Ni alloy having a thickness of 3 to 7 μm on the thin film, in which SiO2 that exists on the Si wafer is removed in advance by hydrofluoric acid aqueous solution or buffered hydrofluoric acid, then the wafer is immersed into aqueous solution containing strong alkali, ammonium fluoride and Cu to perform roughening processing by hydrophilic treatment and etching. In forming the Ni thin film 2, the wafer is immersed into aqueous solution containing Ni salt, complexing agent, ammonium fluoride and pH buffering agent, and Ni ion in the aqueous solution and Si are substituted. The thick film 3 of Ni or Ni alloy is formed by using electroless Ni plating liquid. Heat treatment is performed to the films in the atmospheric air at 150 to 200°C for 15 to 60 minutes.;COPYRIGHT: (C)2014,JPO&INPIT
机译:解决的问题:提供一种在化学镀镍的情况下在Si晶片上形成具有优异粘附性的Ni膜的方法,该化学镀Ni无需涂覆具有催化功能的金属元素并且无需进行过多的热处理。在硅晶片1上具有0.05至0.5μm的厚度的Ni薄膜2,并且在该薄膜上形成具有3至7μm的厚度的Ni或Ni合金的厚膜3,其中SiO 2

著录项

  • 公开/公告号JP5996463B2

    专利类型

  • 公开/公告日2016-09-21

    原文格式PDF

  • 申请/专利权人 JX金属株式会社;

    申请/专利号JP20130056032

  • 发明设计人 村上 昌臣;

    申请日2013-03-19

  • 分类号C23C18/16;C23C18/18;C23C18/32;H01L21/306;

  • 国家 JP

  • 入库时间 2022-08-21 14:42:19

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