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Electronics copper alloy, copper material for electronic devices, the method of manufacturing electronic equipment for the copper alloy, parts for copper alloy plastic working material and electronic equipment for the electronics

机译:电子铜合金,电子设备用铜材料,铜合金电子设备的制造方法,铜合金塑料加工材料零件和电子设备用电子设备

摘要

PROBLEM TO BE SOLVED: To provide a copper alloy for electronic devices that has a low Young's modulus, high proof strength, high conductivity, and high bending workability and is suitable for components for electronic devices such as terminals, connectors, relays, lead frames, etc. and to provide a method of manufacturing the same, copper alloy plastic working material for electronic devices and components for electronic devices.SOLUTION: The copper alloy includes ≥3.3 atom% and ≤6.9 atom% of Mg, and the balance substantially comprising of Cu and inevitable impurities, wherein the electric conductivity &sgr; (%IACS) is within a range of &sgr;≤1.7241/(-0.0347×X+0.6569×X+1.7)×100, where the density of Mg is X atom%, and the average crystalline particle diameter is within a range of ≥1 μm and ≤100 μm. In addition, the average crystalline particle diameter of copper material after intermediate heat treatment and before finishing process is within a range of ≥1 μm and ≤100 μm.
机译:要解决的问题:提供一种用于电子设备的铜合金,该铜合金应具有低的杨氏模量,高的屈服强度,高的导电性和高的弯曲加工性,并且适用于电子设备的组件,例如端子,连接器,继电器,引线框架,解决方案:该铜合金包含Mg≥3.3原子%和≥6.9原子%的Mg,其余大部分为镁合金的制造材料。包含Cu和不可避免的杂质,其中电导率&sgr (%IACS)在≥1.7241/(-0.0347×X + 0.6569×X + 1.7)×100的范围内,其中Mg的密度为X原子%,并且平均结晶粒径在范围内。分别为≥ 1μm和≤ 100μm。另外,在中间热处理之后且在精加工过程之前,铜材料的平均晶体粒径在1μm至100μm的范围内。

著录项

  • 公开/公告号JP5903838B2

    专利类型

  • 公开/公告日2016-04-13

    原文格式PDF

  • 申请/专利权人 三菱マテリアル株式会社;

    申请/专利号JP20110243869

  • 发明设计人 伊藤 優樹;牧 一誠;

    申请日2011-11-07

  • 分类号C22C9/00;C22F1/08;H01B1/02;H01B5/02;B21B3/00;C22F1/00;

  • 国家 JP

  • 入库时间 2022-08-21 14:41:12

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