Wide-gap semiconductor band gap electronic properties measurement method and wide gap semiconductor band gap electronic properties measuring device

摘要

PROBLEM TO BE SOLVED: To provide a measuring method and a measuring apparatus for band gap electronic physical properties of a wide gap semiconductor, in which accurate measurement can be performed and electrodes can be removed easily after evaluation.;SOLUTION: An evaluation device comprises: a mercury probe 20 forming a first electrode 20a which is in contact with a surface of a wide gap semiconductor and acts as a Schottky electrode, and a second electrode 20b which acts as a pseudo ohmic electrode; a voltage pulse generation section; an impedance measuring section; a monochromatic light irradiation section and a control section, and detects/analyzes defect level information remaining in the wide gap semiconductor by utilizing a transient response of photo-capacitance with light excitation from a defect level caused by monochromatic spectral irradiation to the wide gap semiconductor. By using the mercury probe 20, it is not necessary to form electrodes in the wide gap semiconductor beforehand and further, because of a non-invasive manner, an original state can be recovered easily after measuring band gap electronic physical properties.;COPYRIGHT: (C)2014,JPO&INPIT