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Developing solution for photolithography, method for forming resist pattern, and method and apparatus for producing developing solution for photolithography

机译:光刻显影液,形成抗蚀剂图案的方法以及生产光刻显影液的方法和设备

摘要

A developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. A method for producing a developing solution for photolithography capable of suppressing TBAH deposition when producing the developing solution by diluting a concentrated developing solution containing TBAH and a production apparatus used for the production method. The developing solution includes tetrabutylammonium hydroxide and at least one of a water-soluble organic solvent, a surfactant, and a clathrate compound. The temperature of the liquid is maintained at 27° C. or higher during dilution.
机译:使用氢氧化四丁铵(TBAH)作为显影液的碱性试剂的光刻显影液,抑制了TBAH的沉积。通过稀释含有TBAH的浓缩显影液来制造显影液时能够抑制TBAH沉积的光刻用显影液的制造方法以及该制造方法所使用的制造装置。显影液包括氢氧化四丁基铵和水溶性有机溶剂,表面活性剂和笼形化合物中的至少一种。在稀释期间,液体的温度保持在27℃或更高。

著录项

  • 公开/公告号US9291905B2

    专利类型

  • 公开/公告日2016-03-22

    原文格式PDF

  • 申请/专利权人 TOKYO OHKA KOGYO CO. LTD.;

    申请/专利号US201514626383

  • 发明设计人 TOMOYA KUMAGAI;NAOHISA UENO;JUN KOSHIYAMA;

    申请日2015-02-19

  • 分类号G03F7/32;B01F3/08;B01F3/20;B01F7/18;B01F15/00;

  • 国家 US

  • 入库时间 2022-08-21 14:30:27

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