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Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETS
Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETS
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机译:利用应变硅表面沟道MOSFET制造CMOS反相器和集成电路的方法
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摘要
A method of fabricating a circuit comprising an nMOSFET includes providing a substrate, depositing a strain-inducing material comprising germanium over the substrate, and integrating a pMOSFET on the substrate, the pMOSFET comprising a strained channel having a surface roughness of less than 1 nm. The strain-inducing material is proximate to and in contact with the pMOSFET channel, the strain in the pMOSFET channel is induced by the strain-inducing material, and a source and a drain of the pMOSFET are at least partially formed in the strain-inducing material.
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