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A process for manufacturing a doped or non-doped zno material and said material

机译:制造掺杂或非掺杂的zno材料的方法和所述材料

摘要

The present invention mainly relates to a process for manufacturing a doped or non-doped ZnO material and to the doped or non-doped ZnO material obtainable by said process. Said material shows very interesting thermoelectric properties. Said process comprises: a) mixing powders of ZnO, of at least one oxide of doping element, if any, and of at least one solid pore forming agent, said at least one solid pore forming agent, suitable to generate an open porosity, being used in a ratio, with regard to ZnO and the at least one oxide of doping element, if any, of at least 5 wt. % and having a mean size of at least 10 µm, to obtain a mixture, b) forming said mixture to obtain a formed green body, c) heat treating said formed green body to obtain a porous sintered body, showing an open porosity, and d) annealing said porous sintered body in an inert or reducing atmosphere.
机译:本发明主要涉及制造掺杂或非掺杂的ZnO材料的方法,并涉及可通过所述方法获得的掺杂或非掺杂的ZnO材料。所述材料显示出非常有趣的热电性质。所述方法包括:a)将ZnO,粉末,至少一种掺杂元素的氧化物(如果有的话)和至少一种固体成孔剂的粉末混合,所述粉末适合于产生开放孔隙率,相对于ZnO和至少一种掺杂元素的氧化物(如果有的话)的比例至少为5重量%。 %,并且具有至少10μm的平均尺寸,以获得混合物,b)形成所述混合物以获得成形的生坯,c)热处理所述成形的生坯以获得多孔的烧结体,显示出开放的孔隙率,和d)在惰性或还原性气氛中对所述多孔烧结体进行退火。

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