A PROCESS FOR PLASMA TEXTURING OF MULTICRYSTALLINE SILICON WAFERS FOR DEVELOPMENT OF SOLAR CELLS

摘要

The invention relates to a process of placing the silicon wafers on a ground electrode when the process chamber is evacuated to a reduced pressure of 40-50 mili Torr. The wafers are then exposed to plasma of SF6+O2 in the process chamber for 5 minutes and then exposed to atmosphere for about 5 minutes and again exposed to SF6+O2 plasma for 5 minutes to obtain improved texturing of wafers wherein the diffused reflectance of the surfaces of the wafers is reduced by 4-5%.