MORPHOLOGY, BANDGAP AND GRAIN SIZE TAILORING IN CU2O THIN FILM BY MODIFIED CHEMICAL BATH DEPOSITION TECHNIQUE AND METHODS EMPLOYED THEREOF

摘要

Exemplary embodiments of the present disclosure are directed towards a method of morphology, bandgap and grain size tailoring in copper oxide thin film by modified chemical bath deposition technique comprising of; a method of cleaning the glass slide/substrates involving glass slides of predetermined dimensions subjected to a boil in concentrated chromic acid for 2 hours, further cleaned with double distilled water and finally rinsed in acetone before use in the deposition of the films of copper Oxide. A method for preparing a thin film of copper Oxide wherein copper sulphate pentahyrate (CuSO4.5H2O), sodium thiosulfate (Na2S2O3.5H2O) and sodium hydroxide (NaOH) being used in an aqueous medium where a 1.0 M NaOH solution being prepared and heated to 70 �C.Further a colorless solution of copper thiosulphate prepared by addition of 0.1MNa2S2O3 and 0.1M CuSO4 after constant stirring for 30min. The glass slide/substrates being immersed in NaOH solution at 70�C by holding the slide vertically using sample holder for 15s. The OH�� ions from NaOH solution adhering to the surface of the glass slide/substrates thereby performing a second immersion of the glass slide/substrates in the copper ion complex solution for 15s. In the thiosulfate cuprite solution, the Cu (I) ions being formed by dissociation equilibrium adhering to the glass slide/substrates and reacting with (OH��) ions present on the surface to form Cu2O. The glass slide/substrates being immersed in double distilled water for durations of 10s removing the unreacted Cu+ and OH�� ions thus enabling the removal of the loosely bounded particles from the glass slide/substrates marking the completion of the cycle.