SYSTEMS AND METHODS FOR FORMING FILM SOLAR CELLS WITH CuInSe2 and Cu (In, Ga) Se2

摘要

Systems and methods are provided to form solar cells films CuInSe {sub, 2} and Cu (In, Ga) Se {sub, 2}. In one embodiment, a method comprises: during a first step (220), performing a mass transport through the vapor transport of vapor indium chloride (InCl {sub, x}) (143, 223) and vapor is (121, 225) for depositing a semiconductor film (212, 232, 252) on a substrate (114, 210, 230, 250); heating the substrate (114, 210, 230, 250) and the semiconductor film to a desired temperature (112); during a second stage (240) after the first stage (220), performing a mass transport through the vapor transport steam copper chloride (CuCl {sub, x}) (143, 243) and vapor It is (121, 245) to the semiconductor film (212, 232, 252); and during a third step (260) after the second stage (240), performing a mass transport through the vapor transport of vapor indium (InCl {sub, x}) (143, 263) chloride and steam Se (121, 265) to the semiconductor film (212, 232, 252).