首页> 外国专利> THIN FILM SOLAR CELL TO SUPPRESS INTERFACE RECOMBINATION

THIN FILM SOLAR CELL TO SUPPRESS INTERFACE RECOMBINATION

机译:薄膜太阳能电池可抑制界面重组

摘要

The present invention relates to a thin film solar cell. The thin film solar cell to suppress interface recombination comprises: a light absorption layer formed of a GaAs-based material; a first window layer formed on the light absorption layer, formed of a compound semiconductor including aluminum (Al); a second window layer interposed between the first window layer and the light absorption layer, and formed of a compound semiconductor which does not contain Al; a back surface field (BSF) layer formed under the light absorption layer; and a substrate formed under the BSF layer. As such, in accordance with the present invention, a new second window layer is interposed between the window layer and the light absorption layer to improve a characteristic of an interface recombination rate; thereby preventing a current loss such that the efficiency of the solar cell is able to be improved.;COPYRIGHT KIPO 2016
机译:薄膜太阳能电池技术领域本发明涉及薄膜太阳能电池。抑制界面复合的薄膜太阳能电池包括:由GaAs基材料形成的光吸收层;第一窗口层形成在光吸收层上,由包括铝(Al)的化合物半导体形成;第二窗口层介于第一窗口层和光吸收层之间,并且由不包含Al的化合物半导体形成;形成在光吸收层下方的背面场(BSF)层;形成在BSF层下方的基板。这样,根据本发明,在窗口层和光吸收层之间插入新的第二窗口层,以提高界面复合率的特性。从而防止电流损耗,从而可以提高太阳能电池的效率。; COPYRIGHT KIPO 2016

著录项

  • 公开/公告号KR20160040380A

    专利类型

  • 公开/公告日2016-04-14

    原文格式PDF

  • 申请/专利权人 KOREA ADVANCED NANO FAB CENTER;

    申请/专利号KR20140133426

  • 发明设计人 JUN DONG HWANKR;

    申请日2014-10-02

  • 分类号H01L31/046;H01L31/04;

  • 国家 KR

  • 入库时间 2022-08-21 14:14:41

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