METAL OXIDE THIN FILM, METAL-SILICON OXIDE THIN FILM, OR METAL-GERMANIUM OXIDE THIN FILM, AND PREPARING METHOD THEREOF

摘要

The present invention relates to a metal oxide thin film using group 4 compounds used in a semiconductor device, a metal-silicon oxide thin film, a metal precursor to deposit a metal-germanium oxide thin film, and a thin film deposing method using the same and, more specifically, to a metal precursor to deposit a metal oxide thin film, a metal-silicon oxide thin film, and a metal-germanium oxide thin film via metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) and a method to deposit a thin film using the same. According to an aspect of the present invention, provided is an organic metal precursor to deposit a metal-germanium oxide thin film. The organic metal precursor is represented by chemical formula 1.