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The bending deformation of graphene position movement that at least one of the one or more selected from one or more of controlling the work function of the transistor

机译:从控制晶体管的功函数中的一项或多项中选择的一项或多项中的至少一项的石墨烯位置运动的弯曲变形

摘要

In one embodiment of the subject innovation, one or more Piezo material, well having a Piezo characteristics pin, magnetic particles, particles having a charge or a charge band is the barrier adjustment crossing by having the lower end of yes to the pin selected in the grain, the circuit one or more Piezo material due to the electrostatic energy of, Piezo graphene, the magnetic particles having the characteristics, particles having a charge or a charge band is the particle, one or more selection is yes bending pin variant, position movement that is of at least one of It is selected by the principle of the transistor to be controlled for one or more Work function to adjust the height of one or more one or more schottky barrier (schottky barrier). One or more schottky barrier (Schottky Barrier) is graphene, the magnetic particles having the one or more Piezo material, Piezo characteristics, due to that selection of a particle or a charge having a charge strip has particles, adjusting the height of the Schottky barrier (Schottky Barrier) that is, it can also be used as a way to adjust one or more of the Fermi level to adjust the work function (work function). This can be adjusted due to the electrostatic force of the cross is passing circuits (barriers adjustments) of the upper. These models graphene, the magnetic particles having the one or more Piezo material, Piezo properties, particles having electric charge or that the selection of the charge belt particles, covered on top yes causing a bending pin stress applied bending deformation graphene It is understood to regulate one or more of the height of one or more Schottky barrier (Schottky barrier) can be. This Yeah, and using a fast conductivity of the pin to develop a transistor, a conventional structure is difficult yeah, keeping that choice of full vacuum gap, Band gap, Air gap, the pin conduction velocity than conventional field-effect transistors you can develop faster transistors. 4. graphene is that the standby power electronics problem which was recognized as challenges, while maintaining the meantime, the movement speed of boasting `Schottky barrier (Schottky Barrier) height or the Fermi level of the pin Yes Bending, positioning, selection of one or more of the used to solve is to adjust one or more of the one or more Work function. 4-1. So keep the movement speed of electrons which boasts two pins while using it to solve problems that yes standby power which was recognized as a challenge in the meantime Pin Bending, positioning, select one or more of the following. 5. Yeah Yeah pin made of a pin Bending, positioning, using the selected one or more of the transistor that controls one or more than one Work function and other existing transistor that is controlled charge (graphene transistor type) or channel potential regulation (silicon transistor type) will one be able to block current while the electron transfer rate faster through the schottky barrier rather than it used to be yeah made pin so the pin Bending, positioning, select one or more of one or more Work function the one or more, solving adjusted. 6. Yeah Yeah pin made of a pin Bending, positioning, using the selected one or more of the transistor that controls one or more than one Work function and other existing transistor that is controlled charge (graphene transistor type) or channel potential control (silicon transistors method) is that the electron transfer rate by adjusting one or more of the Fermi level is not a quick, yet will be able to block the current. 7. So also it made of pin yeah pin Bending, positioning, using the selected one or more of the transistor that controls one or more than one at least one height adjustable Work function or Fermi level of the Schottky barrier (Schottky Barrier) to Work function by controlling the one or more one or more one will be able to block the current enjoyed rapid electron transfer rate. 8. So also is made that the pin of graphene Bending, positioning, using the selected one or more of the following can be understood as a transistor that controls one or more than one Work function. ;
机译:在本发明的一个实施例中,一种或多种具有压电特性销的压电材料井,磁性颗粒,具有电荷或电荷带的颗粒是通过使下端为“是”的方式进行的势垒调节交叉。颗粒,电路的一种或多种压电材料,由于压电能量,压电石墨烯,具有该特性的磁性颗粒,具有电荷或带电的颗粒为颗粒,一种或多种选择是弯曲销变型,位置移动至少其中之一是根据晶体管的原理来选择的。对于一个或多个功函数,要调节一个或多个一个或多个肖特基势垒(肖特基势垒)的高度,则要对其进行控制。一种或多种肖特基势垒(肖特基势垒)是石墨烯,具有一种或多种压电材料的磁性粒子具有压电特性,由于选择了颗粒或带电荷条的电荷具有粒子,因此可以调节肖特基势垒的高度(肖特基势垒),也可以将其作为一种或多种费米能级的调整方法来调整功函数(功函数)。可以通过鞋面的十字通过电路的静电力(障碍物调节)来进行调节。这些模型石墨烯,具有一种或多种压电材料的磁性粒子,压电特性,具有电荷的粒子或电荷带粒子的选择覆盖在顶部,是导致施加弯曲销应力的弯曲变形石墨烯的理解一个或多个肖特基势垒(肖特基势垒)的高度可以是一个或多个。是的,并且使用引脚的快速电导率来开发晶体管,常规结构是很难的,要保持全真空隙,带隙,气隙,引脚传导速度的选择比常规场效应晶体管要好更快的晶体管。 4.石墨烯是备用电力电子学的问题,被认为是挑战,同时保持其吹嘘`肖特基势垒(Schottky Barrier)高度或引脚的费米能级的运动速度是弯曲,定位,选择一种或多种解决的更多问题是调整一个或多个“工作”功能中的一个或多个。 4-1。因此,请保持拥有两个引脚的电子的移动速度,同时使用它来解决一些问题,即待机功率被公认为是一项挑战,同时引脚弯曲,定位应选择以下一项或多项。 5.是的,是由引脚制成的引脚。使用选定的一个或多个控制一个或多个功函数的晶体管以及其他受控制的电荷(石墨烯晶体管类型)或通道电势调节(硅)晶体管,将其弯曲,定位。晶体管类型)能够阻止电流,而电子通过肖特基势垒的传输速度更快,而不是过去的制作引脚,因此该引脚弯曲,定位,选择一种或多种功函数中的一种或多种,解决调整。 6.是,是由引脚制成的引脚,使用选定的一个或多个控制一个或多个功函数的晶体管以及其他受控制的电荷(石墨烯晶体管类型)或沟道电势控制(硅)晶体管,进行弯曲,定位晶体管方法)是,通过调节费米能级中的一个或多个,电子传输速率不是很快,但将能够阻挡电流。 7.它也是由yeah引脚制成的。使用选定的一个或多个晶体管来弯曲,定位,该晶体管控制一个或多个至少一个高度可调的功函数或肖特基势垒(肖特基势垒)的费米能级工作通过控制一个或多个功能,一个或多个将能够阻断当前享有的快速电子传输速率。 8.还可以理解,使用以下一种或多种选择的石墨烯弯曲,定位销可以理解为控制一个或多个功函数的晶体管。 ;

著录项

  • 公开/公告号KR20160003541U

    专利类型

  • 公开/公告日2016-10-12

    原文格式PDF

  • 申请/专利权人 이윤택;

    申请/专利号KR20160005289U

  • 发明设计人 이윤택;

    申请日2016-09-08

  • 分类号H01L29/16;H01L29/43;H01L29/47;H01L29/66;H01L29/78;H01L29/812;

  • 国家 KR

  • 入库时间 2022-08-21 14:11:32

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