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The bending deformation of graphene position movement that at least one of the one or more selected from one or more of controlling the work function of the transistor
The bending deformation of graphene position movement that at least one of the one or more selected from one or more of controlling the work function of the transistor
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机译:从控制晶体管的功函数中的一项或多项中选择的一项或多项中的至少一项的石墨烯位置运动的弯曲变形
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摘要
In one embodiment of the subject innovation, one or more Piezo material, well having a Piezo characteristics pin, magnetic particles, particles having a charge or a charge band is the barrier adjustment crossing by having the lower end of yes to the pin selected in the grain, the circuit one or more Piezo material due to the electrostatic energy of, Piezo graphene, the magnetic particles having the characteristics, particles having a charge or a charge band is the particle, one or more selection is yes bending pin variant, position movement that is of at least one of It is selected by the principle of the transistor to be controlled for one or more Work function to adjust the height of one or more one or more schottky barrier (schottky barrier). One or more schottky barrier (Schottky Barrier) is graphene, the magnetic particles having the one or more Piezo material, Piezo characteristics, due to that selection of a particle or a charge having a charge strip has particles, adjusting the height of the Schottky barrier (Schottky Barrier) that is, it can also be used as a way to adjust one or more of the Fermi level to adjust the work function (work function). This can be adjusted due to the electrostatic force of the cross is passing circuits (barriers adjustments) of the upper. These models graphene, the magnetic particles having the one or more Piezo material, Piezo properties, particles having electric charge or that the selection of the charge belt particles, covered on top yes causing a bending pin stress applied bending deformation graphene It is understood to regulate one or more of the height of one or more Schottky barrier (Schottky barrier) can be. This Yeah, and using a fast conductivity of the pin to develop a transistor, a conventional structure is difficult yeah, keeping that choice of full vacuum gap, Band gap, Air gap, the pin conduction velocity than conventional field-effect transistors you can develop faster transistors. 4. graphene is that the standby power electronics problem which was recognized as challenges, while maintaining the meantime, the movement speed of boasting `Schottky barrier (Schottky Barrier) height or the Fermi level of the pin Yes Bending, positioning, selection of one or more of the used to solve is to adjust one or more of the one or more Work function. 4-1. So keep the movement speed of electrons which boasts two pins while using it to solve problems that yes standby power which was recognized as a challenge in the meantime Pin Bending, positioning, select one or more of the following. 5. Yeah Yeah pin made of a pin Bending, positioning, using the selected one or more of the transistor that controls one or more than one Work function and other existing transistor that is controlled charge (graphene transistor type) or channel potential regulation (silicon transistor type) will one be able to block current while the electron transfer rate faster through the schottky barrier rather than it used to be yeah made pin so the pin Bending, positioning, select one or more of one or more Work function the one or more, solving adjusted. 6. Yeah Yeah pin made of a pin Bending, positioning, using the selected one or more of the transistor that controls one or more than one Work function and other existing transistor that is controlled charge (graphene transistor type) or channel potential control (silicon transistors method) is that the electron transfer rate by adjusting one or more of the Fermi level is not a quick, yet will be able to block the current. 7. So also it made of pin yeah pin Bending, positioning, using the selected one or more of the transistor that controls one or more than one at least one height adjustable Work function or Fermi level of the Schottky barrier (Schottky Barrier) to Work function by controlling the one or more one or more one will be able to block the current enjoyed rapid electron transfer rate. 8. So also is made that the pin of graphene Bending, positioning, using the selected one or more of the following can be understood as a transistor that controls one or more than one Work function. ;
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