首页> 外国专利> Process for the growth of vertically oriented single-walled carbon nanotubes with the same electronic properties and for the duplication of single-walled carbon nanotubes with the same electronic properties

Process for the growth of vertically oriented single-walled carbon nanotubes with the same electronic properties and for the duplication of single-walled carbon nanotubes with the same electronic properties

机译:具有相同电子特性的垂直取向单壁碳纳米管的生长方法和具有相同电子特性的单壁碳纳米管的复制方法

摘要

The present invention relates to a method for duplicating at least one single-walled carbon nanotube (3) with predetermined electronic properties or several single-walled carbon nanotubes (3) with the same electronic properties. For this purpose, a dispersion (2) is produced and processed by energy input in the dispersion (2) carbon nanotubes (3) into fragments (6). These fragments (6) are applied to a support (7) and aligned. Subsequently, the fragments (6) are extended by chemical vapor deposition and thus the originally present carbon nanotubes (3) multiplied.
机译:本发明涉及一种用于复制至少一个具有预定电子性质的单壁碳纳米管(3)或多个具有相同电子性质的单壁碳纳米管(3)的方法。为此目的,通过将能量输入到分散体(2)中,将碳纳米管(3)制成碎片(6)来生产和处理分散体(2)。将这些碎片(6)施加到支撑物(7)上并对齐。随后,碎片(6)通过化学气相沉积而延伸,因此原始存在的碳纳米管(3)倍增。

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