PROBLEM TO BE SOLVED: To provide a vapor growth device and a growth rate detecting method, capable of simply and accurately detecting a growth rate of a thin film on a substrate.;SOLUTION: A vapor growth device 1 comprises: a chamber 2 which forms a film on a wafer W; a gas supply unit 3 which supplies a raw material gas to the wafer W in the chamber 2; a raw material discharge unit 4 located in the upper part of the chamber 2; a susceptor 5 which supports the wafer in the chamber 2; a rotation unit 6 which holds the susceptor to rotate; a heater 7 which heats the wafer; a gas discharge unit 8 which discharges a gas in the chamber; an exhaust mechanism 9 which exhausts a gas from the gas discharge unit; a radiation thermometer 10 which measures a temperature of the wafer; and a control unit 11 which controls each unit. The radiation thermometer provided on the upper surface of the raw material discharge unit irradiates the wafer with light from a light source, receives the reflection light, measures a reflection light intensity of the wafer, measures a thermal radiation light intensity from a film growth surface Wa of the wafer, and calculates a temperature of the wafer from the thermal radiation light intensity and a reflectivity.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2017,JPO&INPIT
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