DEVELOPMENT CONDITION OPTIMIZATION DEVICE, DEVELOPMENT CONDITION OPTIMIZATION PROGRAM, AND DEVELOPMENT CONDITION OPTIMIZATION METHOD

摘要

PROBLEM TO BE SOLVED: To allow development conditions to be optimized with high accuracy and low cost by simulation without requiring creation of a resist pattern by experiments regarding optimization of the development conditions in development processes of photo lithography and charged particle lithography.;SOLUTION: A development condition optimization device introduces developer effective concentration in consideration of diffusion of resist dissolved in developer, calculates a diffusion equation and a development speed expression by using a resist diffusion coefficient, a development speed constant, and reactant concentration occurring due to chemical reaction occurring on the resist caused by transcription, drawing, bake or the like, calculates the development speed of the reactant relative to the developer effective concentration, and thereby can predict a precise resist pattern shape by simulation.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2017,JPO&INPIT