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PLASMA PROCESSING DEVICE AND PRECOAT METHOD, AND METHOD FOR PRECOAT PROCESS

机译:等离子体处理设备和预涂方法,以及预涂方法

摘要

PROBLEM TO BE SOLVED: To suppress the pollution on a workpiece owing to wear of a partitioning plate.SOLUTION: A plasma processing device 10 comprises: a partitioning plate 40; an antenna 20; and a radio frequency power source 72. The partitioning plate 40 has a plurality of openings 40h of which the maximum width is twice or less the length of a sheath corresponding plasma of a gas for plasma excitation. The partitioning plate partitions the inside of a process chamber 11 into a plasma generation chamber S1 and a process chamber S2. The antenna 20 generates plasma of plasma excitation gas supplied to the plasma generation chamber S1. The radio frequency power source 72 generates plasma of a precoat gas supplied to the plasma generation chamber S1, caused to flow into the process chamber S2 through the plurality of openings 40h of the partitioning plate 40. The plasma processing device 10 performs a precoat process on a face of the partitioning plate 40 on a side of the process chamber S2 by causing the radio frequency power source 72 to generate plasma of a precoat gas before performing a plasma process by plasma of plasma excitation gas.SELECTED DRAWING: Figure 1
机译:解决的问题:为了抑制由于分隔板的磨损而对工件造成的污染。解决方案:等离子体处理装置10包括:分隔板40;天线20;分隔板40具有多个开口40h,其最大宽度为用于等离子体激发的气体的与鞘相对应的等离子体的长度的两倍或更小。分隔板将处理室11的内部分隔成等离子体产生室S1和处理室S2。天线20产生提供给等离子体产生室S1的等离子体激发气体的等离子体。射频电源72产生被供给到等离子体产生室S1的预涂层气体的等离子体,该预涂层气体通过分隔板40的多个开口40h流入处理室S2。等离子体处理装置10在其上进行预涂层处理。在通过等离子体激发气体的等离子体进行等离子体处理之前,通过使射频电源72产生预涂层气体的等离子体,使隔板40在处理室S2的侧面。

著录项

  • 公开/公告号JP2017157627A

    专利类型

  • 公开/公告日2017-09-07

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LTD;

    申请/专利号JP20160037831

  • 发明设计人 KIKUCHI YOSHIYUKI;MITSUMORI AKIYOSHI;

    申请日2016-02-29

  • 分类号H01L21/3065;

  • 国家 JP

  • 入库时间 2022-08-21 13:58:03

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