首页> 外国专利> SUBSTRATE FOR HIGH FREQUENCY PRINTED WIRING BOARD, HIGH FREQUENCY PRINTED WIRING BOARD, METHOD FOR MANUFACTURING SUBSTRATE FOR HIGH FREQUENCY PRINTED WIRING BOARD, AND METHOD FOR MANUFACTURING HIGH FREQUENCY PRINTED WIRING BOARD

SUBSTRATE FOR HIGH FREQUENCY PRINTED WIRING BOARD, HIGH FREQUENCY PRINTED WIRING BOARD, METHOD FOR MANUFACTURING SUBSTRATE FOR HIGH FREQUENCY PRINTED WIRING BOARD, AND METHOD FOR MANUFACTURING HIGH FREQUENCY PRINTED WIRING BOARD

机译:高频印制线路板用基材,高频印制线路板,高频印制线路板的制造方法以及高频印制线路板的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a substrate for a high frequency printed wiring board which can reduce a transmission loss and suppresses a loss caused by a skin effect, and can improve high frequency characteristics.SOLUTION: A substrate for a high frequency printed wiring board has a dielectric layer that contains a fluorine resin as a main component and of which a surface side is surface-modified, and a seed layer layered on one surface of the dielectric layer, where the seed layer contains metal as a main component and has an average thickness of 2 μm or less, the metal may be copper or a copper alloy, the seed layer may be formed of a sintered body of metal particles, the metal particles preferably have an average particle size of 1 nm or more and 500 nm or less, the seed layer preferably has an average thickness of 10 nm or more and 1 μm or less, the arithmetic average thickness Ra of the other surface of the seed layer is preferably 2 μm or less, and a plating layer may be provided on one surface side of the seed layer.SELECTED DRAWING: Figure 1
机译:解决的问题:提供一种用于高频印刷电路板的基板,该基板可以减少传输损耗并抑制由集肤效应引起的损耗,并且可以改善高频特性。解决方案:一种用于高频印刷电路板的基板具有以氟树脂为主要成分且表面侧被表面改性的电介质层和在该电介质层的一个表面上层叠的籽晶层,该籽晶层以金属为主要成分并具有平均厚度为2μm或更小,金属可以是铜或铜合金,晶种层可以由金属颗粒的烧结体形成,金属颗粒的平均粒径优选为1nm以上且500nm或以下。较小的种子层的平均厚度优选为10nm以上且1μm以下,种子层的另一个表面的算术平均厚度Ra优选为2μm以下,并且可以提供镀层。放在种子层的一个表面上。选定的图纸:图1

著录项

  • 公开/公告号JP2016225524A

    专利类型

  • 公开/公告日2016-12-28

    原文格式PDF

  • 申请/专利权人 SUMITOMO ELECTRIC PRINTED CIRCUIT INC;

    申请/专利号JP20150112068

  • 发明设计人 KITANI SATOSHI;PARK CHIN-JU;

    申请日2015-06-02

  • 分类号H05K3/18;H05K3/38;

  • 国家 JP

  • 入库时间 2022-08-21 13:57:17

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