Contamination evaluation method for semiconductor epitaxial wafer and contamination evaluation method for epitaxial growth apparatus using the same

摘要

To provide a contamination evaluation method capable of evaluating contamination of the outermost surface portion of a semiconductor epitaxial wafer by using the DLTS method.A method for evaluating contamination of a semiconductor epitaxial wafer according to the present invention comprises a first step of forming an epitaxial layer on a surface of a semiconductor wafer, a second step of forming an epitaxial layer for measurement, forming a Schottky junction And a fourth step S40 of obtaining a DLTS spectrum in the adjacent region by the DLTS method, wherein the epitaxial layer and the measurement epitaxial layer are of the same conductivity type, and in the second step, , The thickness of the measurement epitaxial layer is formed larger than the thickness of the depletion layer formed by the Schottky junction.BACKGROUND OF THE INVENTION