Enhancement mode GaN HEMT device with gate spacer and method of manufacturing the same

摘要

An enhancement-mode gallium nitride (GaN) transistor (200) comprises a substrate (11); buffer material (12) over the substrate; barrier material (14) over the buffer material; a gate III-V compound (15) over the barrier material; a gate metal (17) over the gate III-V compound; and spacer material (21) formed at least on sidewalls of the gate metal. An independent claim is included for forming the enhancement mode GaN transistor, involving forming buffer material on a substrate; forming AlGaN barrier over the buffer material; forming III-V compound over the AlGaN barrier; forming stacks comprising a gate metal over the gate III-V compound; forming spacer material on at least sidewalls of the gate metal stacks; etching the III-V compound using the gate metal and spacer material as a mask; depositing a dielectric layer; etching the dielectric layer to open drain and source contact areas; and forming Ohmic drain and source contacts in the open drain and source contact areas.