Interlayer filler composition for three-dimensional stacked semiconductor device, the three-dimensional stacked semiconductor device, and manufacturing method of a three-dimensional stacked semiconductor device

摘要

PROBLEM TO BE SOLVED: To provide an interlaminar filler composition for a three-dimensional laminate type semiconductor device excellent in thermal conductivity, adjustable to 3D laminate process, capable of securing a bonding between semiconductor device chips, and capable of forming an interlaminar filled layer maintaining stable bonding even under several environmental changes, to provide the three-dimensional laminate type semiconductor device, and to provide a manufacturing method of the semiconductor device.SOLUTION: An interlaminar filler composition for a three-dimensional laminate type semiconductor device contains: a resin having a melt viscosity at 120°C of 0.001 to 1 Pa s; and an inorganic filler having a volume average particle diameter of 0.1 μm to 10 μm, a specific surface area of 1 m2/g to 60 m2/g and a heat conductivity of 2 W/(m K) or more.