High-quality homogeneous metal oxide thin film forming technology using ozone assistance, and, method of manufacturing an oxide TFT according to thin film fabrication techniques

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an oxide thin film transistor by thin film growth method in which the characteristics are improved by using ozone, and to provide an oxide thin film transistor manufactured by that manufacturing method.SOLUTION: A method of manufacturing an oxide thin film transistor includes at least a step for forming a gate electrode on a substrate, a step for forming a gate insulating film comprising a metal oxide insulator on the substrate so as to cover the gate electrode while introducing ozone into a deposition chamber, by using a raw material solution dissolving a metal compound required for forming the metal oxide insulator, and a step for forming a channel layer comprising a metal oxide semiconductor on the gate insulating film while introducing ozone into a deposition chamber, by using a raw material solution dissolving a metal compound required for forming the metal oxide semiconductor.