首页> 外国专利> MEMS-BASED 3D ION TRAPPING DEVICE FOR USING LASER PENETRATING ION TRAPPING STRUCTURE, AND METHOD FOR MANUFACTURING SAME

MEMS-BASED 3D ION TRAPPING DEVICE FOR USING LASER PENETRATING ION TRAPPING STRUCTURE, AND METHOD FOR MANUFACTURING SAME

机译:利用激光穿透离子俘获结构的基于MEMS的3D离子俘获装置及其制造方法

摘要

An ion trap device is disclosed with a method of manufacturing thereof including a substrate, first and second RF electrode rails, first and second DC electrodes on either upper or lower side of substrate, and a laser penetration passage connected to ion trapping zone from outer side of the first or second side of substrate. The substrate includes ion trapping zone in space defined by first and second sides of substrate separated by a distance with reference to width direction of ion trap device. The first and second RF electrode rails are arranged in parallel longitudinally of ion trap device. The first RF electrode is arranged on upper side of first side, the second DC electrode is arranged on lower side of first side, the first DC electrode is arranged on upper side of second side, and the second RF electrode rail is arranged on lower side of second side.
机译:公开了一种离子阱装置及其制造方法,该离子阱装置包括基板,第一和第二RF电极轨,在基板的上侧或下侧的第一和第二DC电极以及从外侧连接到离子捕获区的激光穿透通道。基板第一面或第二面的厚度。衬底在由衬底的第一侧和第二侧限定的空间中包括离子捕获区,该空间相对于离子捕获装置的宽度方向隔开一距离。第一和第二RF电极轨在离子阱装置的纵向上平行布置。第一RF电极布置在第一侧的上侧,第二DC电极布置在第一侧的下侧,第一DC电极布置在第二侧的上侧,第二RF电极轨布置在下侧第二面。

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