GRAPHENE-SEMICONDUCTOR SCHOTTKY JUNCTION PHOTODETECTOR OF HAVING TUNABLE GAIN

摘要

Disclosed herein is a photodetector utilizing graphene. A single-layer graphene channel is formed on a semiconductor substrate doped with n-type impurity. The graphene channel has an end connected to a source electrode and is physically separated from a drain electrode. Light having passed through a gate insulation layer and a gate electrode generates electron-hole pairs at the interface between the graphene channel and the semiconductor substrate forming a Schottky junction, and a photocurrent is generated by a Schottky barrier. In addition, the Schottky barrier is changed according to an applied gate voltage, thereby changing the photocurrent.